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Expectations of the Semiconductor Industry for High-Quality Diamonds (3)
Release Time:
2022-10-18
Source:
Wen/Pengcheng Semiconductor;
3. Application of Diamond Semiconductors
Research shows that diamond, as a member of the ultra-wide bandgap semiconductor materials (bandgap width 5.5 eV), possesses a series of excellent physical and chemical properties, such as high carrier mobility, high thermal conductivity, high breakdown electric field, high carrier saturation velocity, and low dielectric constant. This has garnered significant attention in the high-tech field, especially in electronic technology, and is recognized as a promising new semiconductor material. Based on these advantages, it helps reduce the mass, volume, and lifecycle costs of electronic components, while allowing devices to operate at higher temperatures, voltages, and frequencies, enabling electronic devices to achieve higher performance with less energy consumption.
Wide bandgap semiconductors, especially diamond, have broad and irreplaceable application advantages and prospects under high frequency and high voltage conditions, and are considered the most promising materials for preparing the next generation of high-power, high-frequency, high-temperature, and low-power-loss electronic devices.
The primary condition for the application of diamond in the semiconductor industry is to meet certain specifications and quality requirements. Natural diamonds are relatively scarce on Earth, and the proportion of natural diamonds that can meet the size and quality demands of the semiconductor industry is even smaller, and they are expensive. Therefore, significantly reducing the cost of large-sized diamond single crystal materials is the fundamental way to address the semiconductor industry's large demand for them.
The preparation methods for diamond single crystals mainly include high-pressure high-temperature (HPHT) method and chemical vapor deposition (CVD) method. Diamond single crystals prepared by the high-pressure high-temperature method generally contain a certain amount of impurities, affecting the purity and grade of the diamond. As a semiconductor material, the doping concentration is difficult to control, and the requirements for synthesis technology are quite strict. The CVD method includes several types such as HFCVD, microwave plasma (MPCVD), and direct current jet methods. Among them, the MPCVD method, due to its use of non-electrode discharge, can produce pure plasma, avoiding contamination caused by electrodes in other growth methods, making it a method for preparing high-grade diamonds.
Hot wire CVD diamond preparation equipment is mainly used for the preparation of microcrystalline and nanocrystalline diamond films, conductive diamond films, hard alloy-based diamond-coated tools, and diamond films coated on the inner holes of ceramic bearings, etc. For example, it can be used to produce corrosion-resistant diamond conductive electrodes for wastewater treatment in the environmental protection field.
It can be used for the preparation of diamond films for flat workpieces, as well as for the preparation of diamond hard coatings on tool surfaces or other irregular surfaces.
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Expectations of the Semiconductor Industry for High-Quality Diamonds (Part 1)
Band gap: determined by the electronic states and atomic configurations of semiconductors, it reflects the energy required for the valence electrons of the atoms that make up this material to be excited from a bound state to a free state; the band gap is an important characteristic parameter of semiconductors. A band gap of zero indicates a metal, a large band gap (generally greater than 4.5 eV) indicates an insulator, and a medium band gap indicates a semiconductor.
Expectations of the Semiconductor Industry for High-Quality Diamonds (Part Two)
The conduction mechanism of semiconductor materials is achieved through two types of charge carriers: electrons and holes, which are classified as N-type and P-type. Diamond, as a group IV element, can be viewed as having a crystal structure formed by two face-centered cubic structures translated along the body diagonal by 1/4 of the lattice constant. Carbon atoms bond with four neighboring carbon atoms through covalent bonds using sp3 hybrid orbitals, forming a tetrahedral structure. By doping diamond with appropriate elements, its electrical properties can be altered, allowing it to be widely used as a semiconductor material in electrical devices.
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